tsm 70n10 100v n-channel power mosfet 1/8 version: d14 to - 25 2 (dpak) to - 25 1 (ipak) key parameter performance parameter value unit v ds 100 v r ds(on) (max) 13 m ? q g 145 nc to - 25 1 s (ipak sl) ordering information part no. package packing tsm70n10cp rog to-252 2.5kpcs / 13 reel tsm70n10ch c5g to-251 75pcs / tube tsm70n10ch x0g to-251s 75pcs / tube note: g denotes for halogen- and antimony-free as thos e which contain <900ppm bromine, <900ppm chlorine (<1500ppm total b r + cl) and <1000ppm antimony compounds. block diagram n-channel mosfet absolute maximum ratings (t a =25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current (note 3) t c =25c i d 70 a t c =70c 61 t a =25c 12 t a =70c 9 drain current-pulsed (note 1) i dm 150 a avalanche current, l=0.5mh i as , i ar 25 a avalanche energy, l=0.5mh e as , e ar 156 mj maximum power dissipation (note 2) t c =25c p d 120 w t c =70c 80 t a =25c 8.3 t a =70c 5.3 storage temperature range t stg -55 to +150 c operating junction temperature range t j -55 to +150 c pin definition : 1. gate 2. drain 3. source
tsm 70n10 100v n-channel power mosfet 2/8 version: d14 thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 1 o c/w thermal resistance - junction to ambient r ? ja 40 o c/w electrical specifications (t j =25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250a bv dss 100 -- -- v drain-source on-state resistance v gs = 10v, i d = 30a r ds(on) -- 10 13 m ? gate threshold voltage v ds = v gs , i d = 250a v gs(th) 2 3 4 v zero gate voltage drain current v ds = 80v, v gs = 0v i dss -- -- 1 a gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na dynamic total gate charge v ds = 50v, i d = 30a, v gs = 10v q g -- 145 -- nc gate-source charge q gs -- 25 -- gate-drain charge q gd -- 43 -- input capacitance v ds = 30v, v gs = 0v, f = 1.0mhz c iss -- 4300 -- pf output capacitance c oss -- 300 -- reverse transfer capacitance c rss -- 120 -- switching turn-on delay time v gs = 10v, v ds = 50v, r g = 3 ? t d(on) -- 27 -- ns turn-on rise time t r -- 13 -- turn-off delay time t d(off) -- 15 -- turn-off fall time t f -- 42 -- drain-source diode characteristics and maximum rati ng drain-source diode forward voltage v gs =0v, i s =30a v sd -- 0.8 1.3 v reverse recovery time i s = 30a, t j =25 o c di/dt = 100a/s t rr -- 165 -- ns reverse recovery charge q rr -- 175 -- nc notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. r ? ja is the sum of the junction-to-case and case-to-amb ient thermal resistances. the case thermal referenc e is defined at the solder mounting surface of the dr ain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design. r ? ja shown below for single device operation on fr-4 pc b in still air 3. the maximum current is limited by package.
tsm 70n10 100v n-channel power mosfet 3/8 version: d14 electrical characteristics curves output characteristics transfer characteristics on-resistance vs. gate-source voltage gate charge on-resistance vs. junction temperature capacitance
tsm 70n10 100v n-channel power mosfet 4/8 version: d14 electrical characteristics curves maximum safe operating area threshold voltage vs. temperature normalized thermal transient impedance, junction-to -ambient i ds =250 a
tsm 70n10 100v n-channel power mosfet 5/8 version: d14 to-252 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 70n10 100v n-channel power mosfet 6/8 version: d14 to-251 (ipak) mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 70n10 100v n-channel power mosfet 7/8 version: d14 to-251s (ipak sl) mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 70n10 100v n-channel power mosfet 8/8 version: d14 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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